Epitaxial lift-off and wafer bonding for III-V photodetectors on silicon

http://bit.ly/2qEDMcc

3 May 2017

Epitaxial lift-off and wafer bonding for III-V photodetectors on silicon

Researchers in Korea have been developing low-production-cost epitaxial lift off (ELO) techniques for wafer-bonded III-V photodetector (PD) transfer to silicon (Si) [SangHyeon Kim et al, Appl. Phys. Lett., vol110, p153505, 2017]. The devices were based on ‘pin’ (p-type/intrinsic/n-type) absorbing structures, but the researchers from Korea Institute of Science and Technology, University of Science and Technology (UST) and Seoul National University believe that the method is extendable to typical gallium arsenide photodetector structures such as quantum well infrared photodetectors and quantum

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